High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
نویسندگان
چکیده
Article history: Received 27 May 2015 Accepted 9 June 2015 Available online xxxx
منابع مشابه
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015